Fundamental oscillation up to 1.08THz in resonant tunneling diodes with high-indium-composition transit layers for reduction of transit delay
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- Teranishi Atsushi
- Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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- Shizuno Kaoru
- Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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- Suzuki Safumi
- Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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- Asada Masahiro
- Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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- Sugiyama Hiroki
- NTT Photonics Laboratories, NTT Corporation
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- Yokoyama Haruki
- NTT Photonics Laboratories, NTT Corporation
Abstract
Fundamental oscillations up to 1.08THz with the output power of 5.5 microwatts was achieved in GaInAs/AlAs resonant tunneling diodes (RTDs) at room temperature. The graded emitter, thin barriers, and high-indium-composition transit layers were introduced to reduce the tunneling and transit delays. The first two of these structures are the same as those in RTDs oscillating at 1.04THz reported recently, and the last structure provided for further reduction of the transit time and increase in frequency due to suppression of the Γ-L transition and increment of the launching velocity.
Journal
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- IEICE Electronics Express
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IEICE Electronics Express 9 (5), 385-390, 2012
The Institute of Electronics, Information and Communication Engineers
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Details 詳細情報について
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- CRID
- 1390282680190819584
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- NII Article ID
- 130001922359
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- ISSN
- 13492543
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- Text Lang
- en
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- Data Source
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- JaLC
- Crossref
- CiNii Articles
- KAKEN
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- Abstract License Flag
- Disallowed