Coincidence of Si-C Bonds at the (1010) Grain Boundary of α-SiC Crystals

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  • α‐ＳｉＣの（１０１０）粒界での結合手の一致度
  • アルファ SiC ノ 101 0 リュウカイ デ ノ ケツゴウ シュ ノ イッ

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Grain boundary structure and the theoretical coincidence of Si-C bonds at the (1010) grain, boundary formed between typical SiC polytypes (2H, 3C, 4H, 6H, and 15R) are discussed under the condition, their c-axis being common. The conclusions obtained are as follotivs:<br>1) β-SiC (3C) showed good coincidence with 6H and 15R polytype under the condition, at least one layer being common between polytypes adjacent at the boundary. The highest coincidence observed at the boundary between 3C and 6H is ca. 33%.<br>2) The 6H polytype generally showed good coincidence of bonds with other polytypes at the grain boundary under the same condition with 1).<br>3) The coincidence, 50% is observed at the boundary formed between 2H and 4H polytype under the same condition with 1).<br>4) The average energy for (1010) boundary is expected to be as high as that for (0001) boundary.

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