-
- Kanai Takuya
- NTT Device Technology Laboratories, NTT Corporation
-
- Fujiwara Naoki
- NTT Device Technology Laboratories, NTT Corporation
-
- Ohiso Yoshitaka
- NTT Device Technology Laboratories, NTT Corporation
-
- Ishii Hiroyuki
- NTT Device Technology Laboratories, NTT Corporation
-
- Shimokozono Makoto
- NTT Device Technology Laboratories, NTT Corporation
-
- Itoh Mikitaka
- NTT Device Technology Laboratories, NTT Corporation
この論文をさがす
説明
<p>We demonstrate a tunable distributed Bragg reflector (DBR) laser diode operating in the 2-µm region. A strained InGaAs multi-quantum well is used for the active region, and InGaAs is used for the passive region in the 2-µm DBR laser. The fabricated DBR laser emits a single-mode continuous wave at 2.02 µm, and the output power exceeds 6 mW at room temperature. A wavelength tuning range of about 10 nm is achieved by controlling of injection currents to the DBR regions.</p>
収録刊行物
-
- IEICE Electronics Express
-
IEICE Electronics Express 13 (16), 20160655-20160655, 2016
一般社団法人 電子情報通信学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390282680197109120
-
- NII論文ID
- 130005406912
-
- ISSN
- 13492543
-
- 本文言語コード
- en
-
- データソース種別
-
- JaLC
- Crossref
- CiNii Articles
- OpenAIRE
-
- 抄録ライセンスフラグ
- 使用不可