書誌事項
- タイトル別名
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- Annealing Effects of Iron Nitride Thin Film Grown by Plasma-Assisted Evaporation Technique
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抄録
Fe-N films were synthesized by a plasma-assisted deposition technique and annealing effects were investigated. X-ray diffraction (XRD) showed that the as-deposited films consist of the FexN (2≤x≤3) mixed phases. After annealing the as-deposited film at 500°C, the saturation magnetization increased to 2.5 Wb/m2 which is larger than that of pure Fe (4 πMs=2.1 Wb/m2). The XRD patterns of the film annealed at 500°C indicated the existence of Fe4N and Fe or Fe16N2 phases where the diffraction patterns of Fe and Fe16N2 could not be distinguished from each other, however, the diffraction patterns obtained by transmission electron microscopy (TEM) confirm the formation of Fe16N2 phase in the film.
収録刊行物
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- Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌)
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Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌) 111 (1294), 369-371, 2003
公益社団法人 日本セラミックス協会
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詳細情報 詳細情報について
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- CRID
- 1390282680224400768
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- NII論文ID
- 110002292344
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- NII書誌ID
- AN10040326
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- ISSN
- 18821022
- 09145400
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- NDL書誌ID
- 6607145
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- IRDB
- NDL
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- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可