書誌事項
- タイトル別名
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- Control of .BETA.-Si3N4 Crystal Morphology and Its Mechanism. (Part 2). Effect of Lanthanide Additives.
- Control of β-Si3N4 Crystal Morphology and Its Mechanism(Part2)Effect of Lanthanide Additives
- Control of ベーターSi3N4 Crystal Morphology and Its Mechanism Part2 Effect of Lanthanide Additives
- Effect of Lanthanide Additives
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説明
Alpha-Si3N4 powder mixed with SiO2 and Ln2O3 (Ln=La, Gd or Yb) was heat-treated at 1750-1900°C. After removing the glassy phase, the morphologies of β-Si3N4 crystals were quantitatively analyzed. The aspect ratios of β-Si3N4 crystals doped with different lanthanide oxides increased in the order of La2O3>Gd2O3>Yb2O3 at high annealing temperatures. The anisotropic Ostwald ripening model successfully simulated grain growth behaviors of β-Si3N4 with different lanthanide additives, and suggested that the observed difference in grain growth behaviors be due to the change in the reaction rate at the (100) interface between the β-Si3N4 crystal and the Ln-Si-O-N liquid phase.
収録刊行物
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- Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌)
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Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌) 107 (1251), 995-1000, 1999
公益社団法人 日本セラミックス協会
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詳細情報 詳細情報について
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- CRID
- 1390282680224896640
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- NII論文ID
- 110002289680
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- NII書誌ID
- AN10040326
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- ISSN
- 18821022
- 09145400
- http://id.crossref.org/issn/09145400
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- NDL書誌ID
- 4900709
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可