書誌事項
- タイトル別名
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- Development of High Strength Reaction-Sintered Silicon Carbide.
- コウキョウド ハンノウ ショウケツ タンカ ケイソ ノ カイハツ
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説明
In reaction-sintered silicon carbides, usually 10-40vol% of the residual silicon phase remains after the reaction-sintered process. For this reason, the bending strength of reaction-sintered silicon carbides decreases to or below 300MPa. The raw material composition (C/SiC) and the starting particle size were optimized in order to decrease the volume fraction of residual silicon and the SiC grain size. There was a tendency for the strength to increase with decreasing the residual silicon size. The strengthening effect may be attributed to the reduced residual silicon size. A reaction-sintered silicon carbide with a high bending strength of 1000MPa could be developed by the present optimization method.
収録刊行物
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- Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌)
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Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌) 109 (1268), 315-321, 2001
公益社団法人 日本セラミックス協会
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詳細情報 詳細情報について
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- CRID
- 1390282680225036928
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- NII論文ID
- 110002288773
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- NII書誌ID
- AN10040326
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- ISSN
- 18821022
- 09145400
- http://id.crossref.org/issn/09145400
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- NDL書誌ID
- 5735481
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDLサーチ
- Crossref
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- 抄録ライセンスフラグ
- 使用不可