Stacking Faults in β-SiC Whiskers

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  • IWANAGA Hiroshi
    Faculty of Liberal Arts, Nagasaki University
  • SHIBATA Noboru
    Faculty of Liberal Arts, Nagasaki University
  • KATSUKI Hiroaki
    Department of Materials Science and Engineering, Faculty of Engineering, Nagasaki University
  • EGASHIRA Makoto
    Department of Materials Science and Engineering, Faculty of Engineering, Nagasaki University

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Other Title
  • β-SiCウイスカー中の積層欠陥
  • ベータ SiC ウイスカーチュウ ノ セキソウ ケッカン

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Abstract

β-SiC whiskers were grown at about 1300°C by the reaction of silicon powder and propylene in a flowing hydrogen atmosphere containing a few percent of hydrogen sulfide. The whiskers with the growth direction [111] were examined by TEM and SEM. Stacking faults observed in the whisker are classified into two types; one has the (111) fault plane perpendicular to the growth direction and the other has fault planes parallel to the (111), (111) and (111) which are not perpendicular to the growth direction. It is likely that these two types of faults have a correlation with the difference in morphology of whiskers. Their fault vector was shown to be 1/3‹111› by the g⋅b=0 criterion.

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