Thermal Conductivity and Temperature Dependence of Linear Thermal Expansion Coefficient of Al4SiC4 Sintered Bodies Prepared by Pulse Electronic Current Sintering

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  • INOUE Koji
    Department of Materials Science and Engineering, Nagoya Institute of Technology
  • MORI Satoshi
    Department of Materials Science and Engineering, Nagoya Institute of Technology
  • YAMAGUCHI Akira
    Department of Materials Science and Engineering, Nagoya Institute of Technology

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Other Title
  • パルス通電焼結法で作製したＡｌ４ＳｉＣ４焼結体の熱伝導率と線熱膨張係数の温度依存生
  • パルス通電焼結法で作製したAl4SiC4焼結体の熱伝導率と線熱膨張係数の温度依存性
  • パルス ツウデン ショウケツホウ デ サクセイ シタ Al4SiC4 ショウケツタイ ノ ネツ デンドウリツ ト セン ネツ ボウチョウ ケイスウ ノ オンド イゾンセイ

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Abstract

The thermal conductivity and the temperature dependence of linear thermal expansion coefficient of Al4SiC4 sintered bodies were investigated from room temperature to 1200°C. Thermal conductivity decreased with the increase porosity. The thermal conductivity and linear expansion coefficient of highly densitied Al4SiC4 body in a range from room temperature to 1200°C were 80W·m-1·K-1 and 7.16 × 10-6K-1, respectively.

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