SiC双結晶の境界構造

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タイトル別名
  • Boundary Structures of SiC Bicrystal
  • SiC ソウ ケッショウ ノ キョウカイ コウゾウ

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抄録

We proposed an atomic configurational model on an asymmetric boundary between 3C (111) and 6H (1012) faces of SiC single crystals. In this model, the boundary energy was estimated with the numbers of dangling bonds at the boundary with different energies on carbon or silicon atom. The results were extended to the boundary between SiC 6H (0001) and 6H (1012) faces for comparing with the experimental results of high-resolution electron microscopy. It is concluded that the geometrical model is useful for studying the boundary between c-face and others of SiC crystals.

収録刊行物

  • 窯業協會誌

    窯業協會誌 95 (1105), 841-844, 1987

    公益社団法人 日本セラミックス協会

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