Spray Pyrolysis Deposition of Copper Indium Disulfide Thin Films.

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  • FUJIWARA Takeshi
    Materials and Structures Laboratory, Tokyo Institute of Technology
  • OKUYA Masayuki
    Department of Materials Science and Technology, Shizuoka University
  • KANEKO Shoji
    Department of Materials Science and Technology, Shizuoka University

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  • スプレー熱分解法による二硫化銅インジウム薄膜の形成

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Abstract

Copper indium disulfide thin films were successfully formed from water-ethanol (1:1) solutions of nonchlorinated compounds on glass substrates by an intermittent spray pyrolysis deposition method. The adequate conditions were determined to be as follows: spraying rate 1.0ml/s, spraying time 0.5 s, substrate temperature 350°C, and S/(Cu+In) ratio of the spray solution 1.25, with which the yield of the thin films was ca. 3.7%. The CuInS2 thin film was dark brown and composed of grains 1-3μm in diameter, with a direct band gap of 1.48 eV. The heterojunctign of CuInS2 and CdS fabricated by this method presents the possibility of the application to a solar cell after the improvement of the short circuit current.

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