Electrical and Photonic Functions Originating from Low-Dimensional Structures in Wide-Gap Semiconductors LnCuOCh (Ln=lanthanide, Ch=chalcogen): A Review

DOI Web Site Web Site 2 Citations 74 References
  • HIRAMATSU Hidenori
    Exploratory Research for Advanced Technology-Solution-Orientated Research for Science and Technology (ERATO-SORST), Japan Science and Technology Agency (JST), in the Frontier Collaborative Research Center (FCRC)
  • KAMIOKA Hayato
    Exploratory Research for Advanced Technology-Solution-Orientated Research for Science and Technology (ERATO-SORST), Japan Science and Technology Agency (JST), in the Frontier Collaborative Research Center (FCRC)
  • UEDA Kazushige
    Exploratory Research for Advanced Technology-Solution-Orientated Research for Science and Technology (ERATO-SORST), Japan Science and Technology Agency (JST), in the Frontier Collaborative Research Center (FCRC) Department of Materials Science, Faculty of Engineering, Kyushu Institute of Technology
  • HIRANO Masahiro
    Exploratory Research for Advanced Technology-Solution-Orientated Research for Science and Technology (ERATO-SORST), Japan Science and Technology Agency (JST), in the Frontier Collaborative Research Center (FCRC)
  • HOSONO Hideo
    Exploratory Research for Advanced Technology-Solution-Orientated Research for Science and Technology (ERATO-SORST), Japan Science and Technology Agency (JST), in the Frontier Collaborative Research Center (FCRC) Materials and Structures Laboratory, Tokyo Institute of Technology Frontier Collaborative Research Center (FCRC), Tokyo Institute of Technology

Bibliographic Information

Other Title
  • ワイドギャップ半導体 <i>Ln</i>CuO<i>Ch</i> (<i>Ln</i>=ランタノイド，<i>Ch</i>=カルコゲン) の低次元構造とオプトエレクトロニクス機能 : 総説

Search this article

Abstract

This article reviews novel electrical and optical properties found for epitaxial thin films of wide-gap semiconductors, LnCuOCh (Ln=lanthanide, Ch=chalcogen). This material series has a two-dimensional crystal structure composed of alternately stacked (Ln2O2)2+ and (Cu2Ch2)2- layers. Distinctive properties such as high hole mobility, degenerate p-type conduction, room temperature exciton, and large optical nonlinearity were found and these are attributed to two-dimensional electronic structure arising from the layered structure, i.e., a narrow-gaped and hole-conductive (Cu2Ch2)2- layer is sandwiched by wide-gaped insulating (Ln2O2)2+ layers. In particular, the wide-gap p-type metallic conduction was the first demonstration among any class of wide-gap materials including GaN: Mg. Realization of epitaxial thin films for these materials by reactive solid-phase epitaxy led to these discoveries which make LnCuOCh promising materials for optoelectronic devices utilizing the high p-type conductivity and/or the room temperature exciton.<br>

Journal

Citations (2)*help

See more

References(74)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top