Special Issue Ceramics Integration. Preparation of Epitaxial YSZ Thin Film Deposited on SiO2/Si(001) at Room Temperature by Pulsed Laser Deposition(PLD).

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  • ISHIGAKI Hirokazu
    Department of Metallurgy and Ceramic Science, Tokyo Institute of Technology
  • YAMADA Tomoaki
    Department of Metallurgy and Ceramic Science, Tokyo Institute of Technology
  • WAKIYA Naoki
    Department of Metallurgy and Ceramic Science, Tokyo Institute of Technology
  • SINOZAKI Kazuo
    Department of Metallurgy and Ceramic Science, Tokyo Institute of Technology
  • MIZUTANI Nobuyasu
    Department of Metallurgy and Ceramic Science, Tokyo Institute of Technology

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Other Title
  • PLD法によるSiO<sub>2</sub>/Si(001) 基板上エピタキシャルYSZ薄膜の室温合成
  • Preparation of Epitaxial YSZ Thin Film Deposited on SiO2/Si(001) at Room Temperature by Pulsed Laser Deposition(PLD)

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Abstract

YSZ thin films were deposited by pulsed laser deposition (PLD) on Si(001) with native SiO2, H-terminated Si(001) and ablated Si on H-terminated Si(001) at various temperatures (800, 600, 400, 200°C and RT (room temperature)). The crystallinity of YSZ thin film on Si(001) with native oxide was the highest among the three substrates. YSZ thin film on ablated Si on H-terminated Si(001) was amorphous. We suggest that an ultrathin SiO2 layer (<1.1nm) is necessary for crystal growth of YSZ thin film. A two-step process was attempted to prepare epitaxial YSZ thin films. First, YSZ thin films were deposited on Si(001) with native SiO2 at 800°C in 8.0×10-5Pa O2 (reduction condition). Second, YSZ thin films were deposited on Si(001) with native SiO2 at various temperatures (800, 600, 400, 200°C and RT) in 7.3×10-2Pa O2. All YSZ thin films deposited by a two-step process were epitaxial. The reason for this mechanism is discussed.

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