Si<sub>3</sub>N<sub>4</sub>を添加したBaTiO<sub>3</sub>系半導体磁器の焼結

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タイトル別名
  • Sintering of Semiconducting BaTiO<sub>3</sub> Doped with Si<sub>3</sub>N<sub>4</sub>
  • Si3N4 オ テンカシタ BaTiO3ケイ ハンドウタイ ジキ ノ ショウケ

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抄録

BaTiO3-ceramics was prepared by the addition of Si3N4 or SiO2 to the starting material and the resistivity was measured. For lower Si contents, and lower sintering temperatures, the room temperature resistivity of the Si3N4-doped specimens was lower than that of SiO2-doped specimens. Observations of surface microstructure for specimens quenched during heating process revealed that marked grain growth took place in specimens doped with 1wt% Si3N4 at the eutectic point. No remarkable structural changes were observed in the specimen doped with 1wt% SiO2. For 3wt% SiO2 addition only heterogeneous grain growth was observed at the eutectic temperature. When heated in N2 atmosphere, however, the specimen doped with 1wt% SiO2 showed marked grain growth, and surface morphology suggested the presence of a liquid phase. Thermal analysis made in the temperature range 25°-1400°C suggested the formation of a larger amount of liquid phase in specimens doped with Si3N4 than those doped with SiO2. These results indicate that nitrogen from Si3N4 enhances the grain growth. Resistivity vs. Si content relations may be explained in terms of the liquid phase formed at the eutectic point.

収録刊行物

  • 窯業協會誌

    窯業協會誌 93 (1077), 237-243, 1985

    公益社団法人 日本セラミックス協会

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