The Growth of Al<sub>2</sub>O<sub>3</sub> Single Crystals by the Czochralski Method

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  • チョクラルスキー法によるAl<sub>2</sub>O<sub>3</sub>単結晶の育成
  • チョクラルスキーホウ ニ ヨル Al2O3 タンケッショウ ノ イクセイ エイ

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The effects of the growth parameters of the Czochralski method on bubble formation were investigated. Pure Al2O3 single crystals were bubble free under both atmospheres of N2+1.5%O2 and N2+20%H2. Although Ti doped Al2O3 single crystals grown under an atmosphere of N2+20% H2 were bubble free, the crystals grown under an atmosphere of N2+1.5%O2 contained many bubble. The effective segregation coefficient of Ti ions was estimated to be greatly reduced under non-reducing atmospheres, possibly due to the valence state change of Ti from 3+ to 4+. The convection of the melt was remarkably enhanced under the reducing atmosphere and an influence of the atmosphere to the melt properties was suggested. The condition for the bubble formation is concluded to be similar to that of constitutional supercooling.

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