ICPフラッシュ蒸着法によるBaTiO<sub>3</sub>薄膜の合成

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  • Preparation of BaTiO<sub>3</sub> Films by ICP Flash Evaporation
  • ICP フラッシュ ジョウチャクホウ ニ ヨル BaTiO3 ハクマク ノ ゴ

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ICP (inductively coupled plasma) flash evaporation, which was a recently developed process for film growth, was applied to the preparation of BaTiO3 films. Powders of BaTiO3 (ave. dia. -0.1μm) were evaporated in thermal Ar+O2 plasma and deposited onto substrates under 20-60kPa. Uniform and translucent films could be obtained on polished fused silica plates. They were consisted of cubic BaTiO3 and the lattice parameter ranged between 0.400 and 0.401nm. The compositions of the films shown by Ba/Ti atomic ratio were 0.98-1.02. The effect of deposition. conditions on the deposition manner were investigated. The results suggested that the mechanism of film growth in ICP flash evaporation was characterized by a masstransport limited process under very high supersaturation. Epitaxial growth was also observed for the films deposited on (100) MgO single crystals.

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