Single Crystal Growth and Electrical Properties of Lanthanum- and Gadolinium-Doped BaTiO<sub>3</sub>

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  • MOTOHIRA Naobumi
    Department of Energy Engineering, Faculty of Engineering, Yokohama National University
  • OKAMOTO Hideaki
    Department of Applied Chemistry, Faculty of Engineering, The University of Tokyo
  • NAKAMURA Yoshinobu
    Department of Applied Chemistry, Faculty of Engineering, The University of Tokyo
  • KISHIMOTO Akira
    Department of Applied Chemistry, Faculty of Engineering, The University of Tokyo
  • MIYAYAMA Masaru
    Research Center for Advanced Science and Technology, The University of Tokyo
  • YANAGIDA Hiroaki
    Department of Applied Chemistry, Faculty of Engineering, The University of Tokyo

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  • ランタン及びガドリニウムを添加したBaTiO<sub>3</sub>単結晶の育成とその電気的性質
  • Single Crystal Growth and Electrical Pr

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Abstract

Single crystals of (Ba0.96-xLnxSr0.04)TiO3 (Ln=La, Gd) were grown over a composition range of x=0.001 to 0.03. Electrical resistivities of the single crystals were measured by the DC four-probe method. The temperature dependence of resistivities of these crystals changed from semiconductive to metallic at the Curie temperature (TC). Although the room temperature resistivities of Gd-doped single crystals were independent of Gd concentration of 1 to 3%, they decreased monotonically with increasing the dopant concentration after annealing in a reducing atmosphere.

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