The Growth of Multi-Star CVD β-SiC and SiC/TiC Composites
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- LIN Tain-Tsair
- Department of Materials Science and Engineering, National Cheng Kung University
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- HON Min-Hsiung
- Department of Materials Science and Engineering, National Cheng Kung University
Bibliographic Information
- Other Title
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- CVD法によるβ-SiC及びSiC/TiCコンポジットの成長
- Growth of Multi Star CVD ベータ SiC and Si
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Abstract
The multi-star β-SiC and SiC/TiC composites have been deposited by CVD method on graphite substrate. The precursors, SiCl4, TiCl4 and C3H8 were used as silicon, titanium and carbon sources, respectively, and hydrogen as a carrier gas for deposition. The morphology of surface and polished cross section for the SiC and SiC/TiC composite deposited was observed by SEM. The crystal orientations and microstructrure were analyzed by XRD and TEM. The growth propagation of the multi-star β-SiC and the SiC/TiC composites is attributed to the twin-plane-reentrant-edge mechanism. The [220] is an intensely preferred orientation as the twin axis of interpenetration twin configuration. The interface of SiC/TiC is severely strained as found in TEM image and dislocations are generated in the TiC phases owing to the mismatch of coefficient of thermal expansion.
Journal
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- Journal of the Ceramic Society of Japan
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Journal of the Ceramic Society of Japan 104 (1207), 174-178, 1996
The Ceramic Society of Japan
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Details 詳細情報について
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- CRID
- 1390282680255579264
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- NII Article ID
- 110002291334
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- NII Book ID
- AN10040326
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- ISSN
- 18821022
- 09145400
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- NDL BIB ID
- 3936660
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed