書誌事項
- タイトル別名
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- Preparation of Highly Oriented Bismuth Titanate Thin Films by Sol-Gel Process
- Preparation of Highly Oriented Bismuth
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説明
In the present study, an attempt is made to prepare a highly c-axis oriented thin film with the composition of Bi4Ti3O12 (BIT). Bismuth nitrate and titanium tetrabutoxide were used as raw materials. Acetylacetone and ethylene glycol were used as the solvents. The thin film was a single phase of BIT completely oriented along the c-axis on Pt substrate with good ferroelectric properties at room temperature: coercive field of 25kV/cm, remanent polarization of 2.5μC/cm2, dielectric constant of 130. The key technique to highly c-axis oriented thin films was heat treatment of sol prepared by optimum combination of raw materials and solvents.
収録刊行物
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- Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌)
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Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌) 104 (1215), 1015-1018, 1996
公益社団法人 日本セラミックス協会
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詳細情報 詳細情報について
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- CRID
- 1390282680255627904
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- NII論文ID
- 110002291392
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- NII書誌ID
- AN10040326
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- ISSN
- 18821022
- 09145400
- http://id.crossref.org/issn/09145400
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- NDL書誌ID
- 4068230
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