SiウエハのChemo-Mechanical-Grinding(CMG)に関する研究

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タイトル別名
  • Research on Chemo-Mechanical-Grinding (CMG) of Si wafer
  • Si ウエハ ノ Chemo Mechanical Grinding CMG ニ カンスル ケンキュウ ダイ2ホウ コテイ トリュウ ニ ヨル ファイ 300mm Si ウエハ ノ カンゼン ヒョウメン ソウセイ
  • —2<sup>nd</sup> Report : Generation of defect free surface on φ300mm Si wafer by fixed abrasive process—
  • ―第2報 : 固定砥粒によるφ300mm Siウエハの完全表面創成―

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To achieve a perfectly damage-free surface by fixed abrasive, this research has proposed a new chemo-mechanical-grinding (CMG) process by effective use of chemical reaction in the grinding process. Based on the results in 1st report which has shown the feasibilities of the CMG process in reducing the subsurface damage, CMG wheels which contain chemically active abrasives and additives have been successfully developed and characterized with a wide range of pH from acidity to alkalinity accordingly. The CMG wheels are applied into grinding of φ300mm bare Si wafers. The ground wafers are examined on both surface and subsurface. The results indicate that the subsurface damage due to machining is no longer present in CMG process by comparing with grinding by diamond wheels, and a defect free surface equivalent to the quality achievable by polishing has been realized by the fixed abrasive process. A discussion is also made to understand the mechanism and chemical reaction involved in the process.

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