Strong interaction between ferroelectric polarization and oxygen vacancy in BiFeO<sub>3</sub> thin film capacitors

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  • MATSUO Hiroki
    Department of Advanced Interdisciplinary Studies, School of Engineering, The University of Tokyo
  • KITANAKA Yuuki
    Department of Applied Chemistry, School of Engineering, The University of Tokyo
  • NOGUCHI Yuji
    Department of Applied Chemistry, School of Engineering, The University of Tokyo
  • MIYAYAMA Masaru
    Department of Applied Chemistry, School of Engineering, The University of Tokyo

Description

Influence of oxygen vacancy (VO••) distribution on the polarization properties of SrRuO3(SRO)/BiFeO3(BFO)/SRO capacitors was investigated. Our thin-film experiments and density function theory (DFT) calculations reveal that a strong attractive interaction between VO•• and the bottom BFO/SRO interface gives rise to an VO••-rich defective layer for as-deposited capacitors. The distribution with the VO••-rich layer is gradually broken by an electrical training and finally becomes symmetric, leading to a polarization-hysteresis change from a markedly rounded to a typical ferroelectric loop. This study demonstrates that defect engineering utilizing VO•• is an effective approach to control the polarization-related properties of BFO in capacitor form.

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