Spin Filter Effect of La0.7Sr0.3MnO3/Bi1-xBaxFeO3 Junctions

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  • Kobayashi S.
    Dept. of Crystalline Materials Sciences, Nagoya University
  • Tachiki S.
    Dept. of Crystalline Materials Sciences, Nagoya University
  • Yoshimoto K.
    Dept. of Crystalline Materials Sciences, Nagoya University
  • Sugimoto Y.
    Dept. of Crystalline Materials Sciences, Nagoya University
  • Takeda Y.
    Dept. of Crystalline Materials Sciences, Nagoya University
  • Ueda K.
    Dept. of Crystalline Materials Sciences, Nagoya University
  • Asano H.
    Dept. of Crystalline Materials Sciences, Nagoya University

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  • Ｌａ０．７Ｓｒ０．３ＭｎＯ３／Ｂｉ１－ｘＢａｘＦｅＯ３接合におけるスピンフィルター効果
  • La0 7Sr0 3MnO3 Bi1 xBaxFeO3 セツゴウ ニ オケル スピンフィルター コウカ

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Abstract

  Spin-filter devises were fabricated using multiferroic Bi1-xBaxFeO3 films. La1-xSrxMnO3/Bi1-xBaxFeO3/LaNiO3 junctions showed non-linear current-voltage characteristics with barrier height of 0.37eV and magnetoresistance (MR) of 2.3% at 4.2 K. These results indicate ultra-thin Bi1-xBaxFeO3 layers behaved as ferromagnetic tunnel barriers and showed spin-filter effects. From the analysis of the temperature dependence of current-voltage characteristics of the junctions and the leakage current of Bi1-xBaxFeO3 layers, one of possible reasons for low MR is suppression of spin-filter effects by tunneling through defect levels induced by O and/or Bi deficiency in Bi1-xBaxFeO3 tunnel barriers.

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