Temperature dependence of the electrical and electromechanical properties of Ba(Zr0.2Ti0.8)O3 thin films prepared by chemical solution deposition
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- MAIWA Hiroshi
- Shonan Institute of Technology
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- OHASHI Kohei
- Shonan Institute of Technology
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- HAYASHI Takashi
- Shonan Institute of Technology
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抄録
Thin films of Ba(Zr0.2Ti0.8)O3 (BZT) were prepared on Pt/Ti/SiO2/Si and Pt/TiOx/SiO2/Si substrates by chemical solution deposition. The alkoxide–hydroxide method was applied. The temperature dependence of the electrical and electromechanical properties of the BZT thin films was investigated. Application of a Pt/TiOx/SiO2/Si substrate is effective in suppressing the unknown phase formation and in obtaining high permittivity of 1080 and tunability under 400 kV/cm of 84%. The XPS depth profile reveals that titanium and oxygen are richly present close to the BZT/Pt interface of the films on a Pt/TiOx/SiO2/Si substrate. The temperature dependences of permittivity, tunability and field-induced strain are slight between −100°C and 100°C. The piezoelectric coefficient at room temperature estimated from the slope of the displacement loop is 35 pm/V.
収録刊行物
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- Journal of the Ceramic Society of Japan
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Journal of the Ceramic Society of Japan 118 (1380), 735-737, 2010
公益社団法人 日本セラミックス協会
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詳細情報 詳細情報について
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- CRID
- 1390282680262259968
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- NII論文ID
- 130000304627
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- NII書誌ID
- AA12229489
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- ISSN
- 13486535
- 18820743
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- NDL書誌ID
- 10770828
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- 抄録ライセンスフラグ
- 使用不可