Preparation of polycrystalline VO2 films on glass and TiO2/glass substrates by means of excimer laser assisted metal organic deposition
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- NISHIKAWA Masami
- Yokohama National University
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- NAKAJIMA Tomohiko
- National Institute of Advanced Industrial Science and Technology
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- MANABE Takaaki
- National Institute of Advanced Industrial Science and Technology
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- OKUTANI Takeshi
- Yokohama National University
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- TSUCHIYA Tetsuo
- National Institute of Advanced Industrial Science and Technology
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An excimer laser assisted metal organic deposition process for the preparation of vanadium dioxide (VO2) films is described. When a precursor film grown on a silica glass substrate by preheating at 300°C was irradiated with a KrF laser at room temperature in air, the film was crystallized into polycrystalline VO2 phases. Generally, the preparation of VO2 films requires strict atmosphere control, but in this process, the polycrystalline VO2 films were successfully prepared without it. Moreover, it was revealed that crystallization into the VO2 phases was promoted by a TiO2 buffer layer placed on the glass substrate. This means that the photochemical reaction induced by the TiO2 absorbing the laser participates in the crystallization. The electrical resistivity of the film grown on the TiO2/glass substrate was lowered compared to that of the film grown on the glass substrate due to improvement of the film uniformity. The crystallinity of the obtained film was dependent on the irradiation time. With the improved crystallinity of the film, the resistivity drop through the metal-insulator transition became large.
収録刊行物
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- Journal of the Ceramic Society of Japan
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Journal of the Ceramic Society of Japan 118 (1381), 788-791, 2010
公益社団法人 日本セラミックス協会
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詳細情報 詳細情報について
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- CRID
- 1390282680263371392
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- NII論文ID
- 130000333469
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- NII書誌ID
- AA12229489
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- ISSN
- 13486535
- 18820743
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- NDL書誌ID
- 10801549
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可