Composition dependence of crystal structure and electrical properties for epitaxial films of Bi(Zn1/2Ti1/2)O3-BiFeO3 solid solution system

DOI Web Site Web Site 被引用文献3件 参考文献14件
  • YAZAWA Keisuke
    Department of Innovative and Engineered Materials, Tokyo Institute of Technology
  • YASUI Shintaro
    Department of Innovative and Engineered Materials, Tokyo Institute of Technology
  • MORIOKA Hitoshi
    Department of Innovative and Engineered Materials, Tokyo Institute of Technology Application Laboratory, Bruker AXS
  • YAMADA Tomoaki
    Department of Innovative and Engineered Materials, Tokyo Institute of Technology
  • UCHIDA Hiroshi
    Department of Materials and Life Sciences, Sophia University
  • GRUVERMAN Alexei
    Department of Physics and Astronomy, University of Nebraska–Lincoln
  • FUNAKUBO Hiroshi
    Department of Innovative and Engineered Materials, Tokyo Institute of Technology

この論文をさがす

抄録

Epitaxial xBi(Zn1/2Ti1/2)O3–(1 − x)BiFeO3 films were grown on (100)cSrRuO3//(100)SrTiO3 substrates by metal organic chemical vapor deposition (MOCVD). The effects of x value on the crystal structure and the electrical properties were investigated. Constituent phase changed from rhombohedral symmetry to two types of tetragonal ones with different unit cell volume and tetragonality. Rhombohedral phase and the tetragonal phase with smaller tetragonality were not ascertained to transform to cubic phase up to 800°C from high temperature XRD results. Relative dielectric constant measured at room temperature showed the maximum value at x = 0.21 near the phase boundary between tetragonal and rhombohedral symmetries. Leakage current became small when the measurement temperature decreased at 80 K and the ferroelectricity monotonously decreased with increasing x values and was not ascertained above 0.26.

収録刊行物

被引用文献 (3)*注記

もっと見る

参考文献 (14)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ