In-situ observation of a MEMS-based Pb(Zr,Ti)O3 micro cantilever using micro-Raman spectroscopy

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  • NISHIDE Masamichi
    Department of Communications Engineering, National Defense Academy
  • KUZUHARA Maresuke
    Department of Electronic and Photonic Systems Engineering, Kochi University of Technology
  • TAI Takeshi
    Department of Electronic and Photonic Systems Engineering, Kochi University of Technology
  • KATODA Takashi
    Department of Electronic and Photonic Systems Engineering, Kochi University of Technology
  • MORIOKA Hitoshi
    Application Scientist XRD for Thin Film, Bruker AXS K.K.
  • FUNAKUBO Hiroshi
    Department of Innovative and Engineered Materials, Tokyo Institute of Technology
  • NISHIDA Ken
    Department of Communications Engineering, National Defense Academy
  • YAMAMOTO Takashi
    Department of Communications Engineering, National Defense Academy

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The crystal structure and strain in a (100)/(001)-oriented PZT micro cantilever under applied voltage were characterized by in-situ Raman spectroscopy. A Pt/LaNiO3/(100)/(001)PZT/LaNiO3/Pt/Ti/SiO2/silicon-on-insulator (SOI) multilayer structure was fabricated in a process based on a microelectromechanical system (MEMS). The volume fraction of the domain switching from a-domains to c-domains was monotonously increased with increases in the applied voltage. No compressive in-plane lattice strain was induced in the PZT film with the increases in the applied voltage. These results show that Raman spectroscopy is a useful method for in-situ observation of PZT micro cantilevers.

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