Characterization of microstructures of thermal oxide scales on silicon carbide using transmission electron microscopy
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- CHAYASOMBAT Bralee
- National Metal and Materials Technology Center
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- KATO Takeharu
- Nanostructures Research Laboratory, Japan Fine Ceramics Center
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- HIRAYAMA Tsukasa
- Nanostructures Research Laboratory, Japan Fine Ceramics Center
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- TOKUNAGA Tomoharu
- Department of Quantum Engineering, Nagoya University
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- SASAKI Katsuhiro
- Department of Quantum Engineering, Nagoya University
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- KURODA Kotaro
- Department of Quantum Engineering, Nagoya University
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抄録
Hexagonal single crystal silicon carbide was thermally oxidized in pure oxygen and in air at 1473 K. The thermally formed oxide scales were composed mostly of amorphous silica. However, some crystalline phase oxide scales were observed randomly distributed on the formed oxide scale. The ratio of crystalline scale to overall oxide scale was less than 5 percent. We characterized the microstructures of the thermally formed oxide scales using transmission electron microscopy with low-dose observation technique. The oxide scales in some regions were divided into two layers, with crystalline scale on the upper and amorphous scale on the lower layer. Traces of calcium were found in the crystalline phase oxide scale, which could have influenced the crystallization.
収録刊行物
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- Journal of the Ceramic Society of Japan
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Journal of the Ceramic Society of Japan 120 (1398), 64-68, 2012
公益社団法人 日本セラミックス協会
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詳細情報 詳細情報について
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- CRID
- 1390282680264047616
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- NII論文ID
- 130002067590
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- NII書誌ID
- AA12229489
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- ISSN
- 13486535
- 18820743
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- NDL書誌ID
- 024029598
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- 抄録ライセンスフラグ
- 使用不可