A Study of the Graphene Formation on Silicon Carbide-on-Insulator Substrates

DOI Web Site 11 References

Bibliographic Information

Other Title
  • SOI 基板を用いたグラフェン形成に関する研究
  • SOI キバン オ モチイタ グラフェン ケイセイ ニ カンスル ケンキュウ

Search this article

Description

  We investigated the effect of ion-beam irradiation on the growth of graphene at the 3C-SiC(111)/SiO2/Si(111) substrate by the surface decomposition method. When Ar+ ions with 1 keV were irradiated to the sample surface for 1 h and then annealed at 1200℃ for 1 min, graphene layers were formed. The graphene surfaces were evaluated by scanning tunneling microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. We found that the growth of graphene at the surface decomposition method is promoted by ion-beam irradiation. This result indicated that ion-beam irradiation caused breakage of Si-C bonds and induced desorption of Si atoms from the surface.<br>

Journal

References(11)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top