書誌事項
- タイトル別名
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- Orientational Control of Barrier Layer with Interfacial Modification and Its Effect on Tunnel Magnetoresistance in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
- CoFeB MgO CoFeB キョウジセイ トンネル セツゴウマク ノ セキソウ カイメン セイギョ ニ ヨル ショウヘキ マク ハイコウ セイギョ ト トンネル ジキ テイコウ コウカ
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抄録
Crystallographic orientation of the MgO barrier in sputter-deposited CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) and its effect on tunnel magnetoresistance (TMR) were investigated. The degree of MgO(001) orientation was estimated with the integral intensity ratio (I(200)/I(220)) of diffraction lines from MgO(200) and MgO(220) planes obtained in grazing incident x-ray diffraction profiles. The main results are stated as follows. (1) I(200)/I(220)~4, meaning the (001) orientation of MgO, is realized when the underlaid CoFeB maintains amorphous structure, meanwhile MgO on bcc(110)-oriented CoFe shows (111) orientation (I(200)/I(220)=0). (2) The prevention of epitaxial growth on hcp(00.1)-oriented Ru layer is effective to maintain amorphous structure of CoFeB. (3) The achievable TMR ratio after high temperature (280°C-450°C) annealing is mainly dominated by the MgO orientation and giant TMR ratio exceeding 200% is only obtained with I(200)/I(220)≥3.4, while the resistance area product is independent of I(200)/I(220).<br>
収録刊行物
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- Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｖａｃｕｕｍ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ
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Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｖａｃｕｕｍ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ 51 (9), 583-588, 2008
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390282680270513792
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- NII論文ID
- 10024327635
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- NII書誌ID
- AA12298652
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- ISSN
- 18824749
- 18822398
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- NDL書誌ID
- 9675500
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可
