Deep Reactive Ion Etching of Lithium Niobate by Using Low-Frequency Bias
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- ASAJI Toyohisa
- Technical Research and Development Division, Tateyama Machine Co., Ltd.
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- NABESAWA Hirofumi
- Toyama Industrial Technology Center
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- UCHIYAMA Hidefumi
- Technical Research and Development Division, Tateyama Machine Co., Ltd.
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- ABE Takashi
- Graduate School of Science and Technology, Niigata University
Bibliographic Information
- Other Title
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- 低周波バイアスを用いたニオブ酸リチウムの深掘りエッチング
- テイシュウハ バイアス オ モチイタ ニオブサン リチウム ノ フカボリ エッチング
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Abstract
Lithium niobate (LN) etching has been demonstrated with an electron cyclotron resonance (ECR) plasma and low-frequency bias. The etching was studied by using Ar, BCl3 and SF6 gases. The etch rates of BCl3 and SF6 are about 3.8 and 4.6 times higher than that of Ar, respectively. The highest etch rate (220 nm/min) was obtained under the condition of SF6 plasma and 1 MHz bias. The etching method which can fabricate micro-trenches with high-aspect ratio and smooth surfaces has been achieved.<br>
Journal
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- Journal of the Vacuum Society of Japan
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Journal of the Vacuum Society of Japan 53 (8), 501-503, 2010
The Vacuum Society of Japan
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Details 詳細情報について
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- CRID
- 1390282680270524288
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- NII Article ID
- 10026609630
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- NII Book ID
- AA12298652
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- ISSN
- 18824749
- 18822398
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- NDL BIB ID
- 10812288
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed