書誌事項
- タイトル別名
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- Fabrication and Electric Properties of Ferroelectric-Gate Thin Film Transistors with Nano-Channel
- ナノチャネル オ ユウスル キョウ ユウデンタイ ゲート ハクマク トランジスタ ノ サクセイ ト ソノ デンキ トクセイ ヒョウカ
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抄録
Controlled-polarization-type ferroelectric gate thin film transistors (CP-type FeTFT) with nano-gap channel were fabricated by using a ZnO channel and a YMnO3 ferroelectric film. The electrical properties of the epitaxially grown (0001)ZnO/(0001)YMnO3 heterostructure fabricated by a pulsed laser deposition method were investigated by an impedance spectroscopy to discuss the carrier modulation by the spontaneous polarization of YMnO3. It was found that the ZnO layer surrounding the top electrode has low resistivity. 100 nm-gap electrode was formed by an inclined deposition method on the ZnO/YMnO3 heterostructure. The TFT showed non-volatile memory operation. However, the field-effect mobility is calculated to be 0.25 cm2/Vs, which is ten times lower than that of the micro-channel TFT. The decrease of the resistivity of the ZnO layer surrounding the top electrode is a possible origin of the decrease of the field-effect mobility.<br>
収録刊行物
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- Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｖａｃｕｕｍ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ
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Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｖａｃｕｕｍ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ 56 (5), 172-175, 2013
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390282680272914304
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- NII論文ID
- 10031169378
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- NII書誌ID
- AA12298652
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- BIBCODE
- 2013JVSJ...56..172N
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- COI
- 1:CAS:528:DC%2BC3sXps1Cqs7g%3D
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- ISSN
- 18824749
- 18822398
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- NDL書誌ID
- 024669543
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可