Advanced Plating Photoresist Development for Semiconductor Packages

DOI Web Site 参考文献6件
  • Sakakibara Hirokazu
    Advanced Electronic Materials Laboratory, Fine Electronic Materials Research Laboratories, Yokkaichi Research Center, JSR Corporation
  • Akimaru Hisanori
    Advanced Electronic Materials Laboratory, Fine Electronic Materials Research Laboratories, Yokkaichi Research Center, JSR Corporation
  • Hiro Akito
    Advanced Electronic Materials Laboratory, Fine Electronic Materials Research Laboratories, Yokkaichi Research Center, JSR Corporation
  • Sato Keiichi
    Advanced Electronic Materials Laboratory, Fine Electronic Materials Research Laboratories, Yokkaichi Research Center, JSR Corporation
  • Fujiwara Koichi
    Advanced Electronic Materials Laboratory, Fine Electronic Materials Research Laboratories, Yokkaichi Research Center, JSR Corporation
  • Okamoto Kenji
    Advanced Electronic Materials Laboratory, Fine Electronic Materials Research Laboratories, Yokkaichi Research Center, JSR Corporation
  • Kusumoto Shiro
    Advanced Electronic Materials Laboratory, Fine Electronic Materials Research Laboratories, Yokkaichi Research Center, JSR Corporation

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説明

In recent years, novel electronic products like mobile phones, tablets, and personal computer have shrunk dramatically and become highly functionalized. To satisfy these market trends of smaller thinner devices, packaging technologies such as 3D-TSV, 2.5D, PoP and Flip-chip wafer bumping are being used. We have developed negative tone resists for re-distribution layer, C4 and micro bumps. Our resist is negative tone resist which incorporates an acrylate cross-linker system with photo radical initiator. This formulation shows excellent chemical resistance to various plating solutions such as Cu, Ni, Sn/Ag and Au, with good stripability. The key technology of plating resists for advanced packages is high resolution, allowing for high aspect ratio patterning capability that covers a wide range of film thicknesses. An example of such applications is in advanced PoP package design which require a thick film material that has high resolution capability, along with high aspect ratio performance. Additionally, high resolution re-distribution layer resists can be used to create fine pitch conditions which are necessary for package downsizing. Our resist shows good patterning performance from below 10 μm to above 100 μm film thickness conditions. In this paper, material design and key properties of novel plating resist with high resolution and high aspect ratio performance with a wide range film thickness ranges are discussed.

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