Molecular Beam Epitaxial Growth of Single-Crystalline ZnO Films on a-Plane Sapphire Substrates
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- KOIKE Kazuto
- New Materials Res. Center, Osaka Inst. of Tech.
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- KOMURO Tomonori
- New Materials Res. Center, Osaka Inst. of Tech.
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- YAN Feng-Ping
- New Materials Res. Center, Osaka Inst. of Tech.
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- OGATA Ken-ichi
- Bio Venture Center, Osaka Inst. of Tech.
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- SASA Shigehiko
- New Materials Res. Center, Osaka Inst. of Tech.
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- INOUE Masataka
- New Materials Res. Center, Osaka Inst. of Tech.
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- YANO Mitsuaki
- New Materials Res. Center, Osaka Inst. of Tech.
Bibliographic Information
- Other Title
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- Ａ面サファイア基板を用いた単結晶ＺｎＯ薄膜の分子線エピタキシャル成長
- Aメン サファイア キバン オ モチイタ タンケッショウ ZnO ハクマク ノ ブンシセン エピタキシャル セイチョウ
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Description
This paper describes radical-source molecular beam epitaxial growth of ZnO films on a-plane sapphire substrates. Reflection high-energy electron diffraction observation and x-ray diffraction measurement show that single-crystalline ZnO (0001) films without any rotational domains are obtained on the sapphire substrates. Photoluminescence spectra measured at 300K exhibit an intense emission peak from free excitons. Hall measurement shows that phonon scattering becomes dominant with increasing temperature and a relatively high electron mobility of -100cm2/Vs with a low residual electron density of -4×1017cm-3 at 300K is achieved.
Journal
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- Journal of the Society of Materials Science, Japan
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Journal of the Society of Materials Science, Japan 52 (12), 1414-1419, 2003
The Society of Materials Science, Japan
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Details 詳細情報について
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- CRID
- 1390282680395669632
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- NII Article ID
- 110002302055
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- NII Book ID
- AN00096175
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- COI
- 1:CAS:528:DC%2BD2cXks1Krsg%3D%3D
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- ISSN
- 18807488
- 05145163
- http://id.crossref.org/issn/05145163
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- NDL BIB ID
- 6788902
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed
