Improvement and Problems of Power Devices Using Wide-Bandgap Semiconductors

DOI Web Site Web Site 3 Citations 3 References

Bibliographic Information

Other Title
  • ワイドバンドギャップ半導体によるパワーデバイスの性能改善と課題
  • ワイドバンドギャップ ハンドウタイ ニ ヨル パワーデバイス ノ セイノウ カイゼン ト カダイ

Search this article

Abstract

Wide-bandgap semiconductors such as SiC have been studied eagerly as a next generation power devices because of its superior physical property. Though very high carrier density is main reason for superior characteristics of that, there are some problems to realize the predicted performance. One is heat radiation limited by package performance. The other is SCSOA (Short Circuit Safe Operating Area) limited by heat capacity of power device itself. Besides, parasitic inductance of power circuitry affects switching losses and switching speed. High current density operation is the key role to realize the predicted performance, and with that purpose, semiconductor device technology, package technology, and circuit technology must be optimized as the total engineering.

Journal

Citations (3)*help

See more

References(3)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top