ワイドバンドギャップ半導体によるパワーデバイスの性能改善と課題

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タイトル別名
  • Improvement and Problems of Power Devices Using Wide-Bandgap Semiconductors
  • ワイドバンドギャップ ハンドウタイ ニ ヨル パワーデバイス ノ セイノウ カイゼン ト カダイ

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抄録

Wide-bandgap semiconductors such as SiC have been studied eagerly as a next generation power devices because of its superior physical property. Though very high carrier density is main reason for superior characteristics of that, there are some problems to realize the predicted performance. One is heat radiation limited by package performance. The other is SCSOA (Short Circuit Safe Operating Area) limited by heat capacity of power device itself. Besides, parasitic inductance of power circuitry affects switching losses and switching speed. High current density operation is the key role to realize the predicted performance, and with that purpose, semiconductor device technology, package technology, and circuit technology must be optimized as the total engineering.

収録刊行物

  • 材料

    材料 64 (9), 701-706, 2015

    公益社団法人 日本材料学会

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