Improvement and Problems of Power Devices Using Wide-Bandgap Semiconductors
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- TERASHIMA Tomohide
- Advanced Technology R&D Center, Mitsubishi Electric Corporation
Bibliographic Information
- Other Title
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- ワイドバンドギャップ半導体によるパワーデバイスの性能改善と課題
- ワイドバンドギャップ ハンドウタイ ニ ヨル パワーデバイス ノ セイノウ カイゼン ト カダイ
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Abstract
Wide-bandgap semiconductors such as SiC have been studied eagerly as a next generation power devices because of its superior physical property. Though very high carrier density is main reason for superior characteristics of that, there are some problems to realize the predicted performance. One is heat radiation limited by package performance. The other is SCSOA (Short Circuit Safe Operating Area) limited by heat capacity of power device itself. Besides, parasitic inductance of power circuitry affects switching losses and switching speed. High current density operation is the key role to realize the predicted performance, and with that purpose, semiconductor device technology, package technology, and circuit technology must be optimized as the total engineering.
Journal
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- Journal of the Society of Materials Science, Japan
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Journal of the Society of Materials Science, Japan 64 (9), 701-706, 2015
The Society of Materials Science, Japan
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Keywords
Details 詳細情報について
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- CRID
- 1390282680420817408
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- NII Article ID
- 130005098880
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- NII Book ID
- AN00096175
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- ISSN
- 18807488
- 05145163
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- NDL BIB ID
- 026754059
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed