書誌事項
- タイトル別名
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- Crystal Growth and Device Applications of Corundum-Structured Gallium Oxide
- コランダム コウゾウ サンカ ガリウム ノ ケッショウ セイチョウ ト デバイス オウヨウ
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説明
<p>This paper reviews the evolution of corundum-structured gallium oxide (α-Ga2O3) semiconductors from crystal growth of single-crystalline films to potential device applications. In spite of thermodynamically metastable phase, high-quality α-Ga2O3 can be grown on sapphire substrates by the use of mist chemical vapor deposition (CVD), or mist epitaxy, allowing low-cost and high performance power devices. N-type conductivity control is achieved by Sn doping with the carrier concentration from 1017 to 1019 cm-3. Marked progress in performance of Schottky barrier diodes (SBDs) has been brought by the development of device structures. The most up-to-date results show on resistance and breakdown voltage of 0.1 mΩ・cm2 and 531 V (SBD1) or 0.4 mΩ・cm2 and 855 V (SBD2), respectively, and the record-low on resistance was demonstrated at the high breakdown voltage. These results encourage the future development of low cost and high performance power devices with α-Ga2O3. </p>
収録刊行物
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- 材料
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材料 65 (9), 631-637, 2016
公益社団法人 日本材料学会
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詳細情報 詳細情報について
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- CRID
- 1390282680421013632
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- NII論文ID
- 130005416090
- 40020960139
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- NII書誌ID
- AN00096175
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- ISSN
- 18807488
- 05145163
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- NDL書誌ID
- 027655615
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可