Localized States in GaAs<sub><font size="-1">1-<i>x</i></font></sub>Bi<sub><font size="-1"><i>x</i></font></sub> and GaAs/GaAs<sub><font size="-1">1-<i>x</i></font></sub>Bi<sub><font size="-1"><i>x</i></font></sub> Heterointerface
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- FUYUKI Takuma
- Dept. of Electronics. Kyoto Inst. of Tech.
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- ITO Mizuki
- Dept. of Electronics. Kyoto Inst. of Tech.
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- KADO Kousuke
- Dept. of Electronics. Kyoto Inst. of Tech.
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- YOSHIMOTO Masahiro
- Dept. of Electronics. Kyoto Inst. of Tech.
Bibliographic Information
- Other Title
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- GaAs<sub><font size="-1">1-<i>x</i></font></sub>Bi<sub><font size="-1"><i>x</i></font></sub>およびGaAs/GaAs<sub><font size="-1">1-<i>x</i></font></sub>Bi<sub><font size="-1"><i>x</i></font></sub>ヘテロ界面における局在準位
- GaAs₁₋xBi[x]およびGaAs/GaAs₁₋xBi[x]ヘテロ界面における局在準位
- GaAs ₁ ₋ xBi[x]オヨビ GaAs/GaAs ₁ ₋ xBi[x]ヘテロ カイメン ニ オケル キョクザイジュンイ
- Localized States in GaAs1-xBix and GaAs/GaAs1-xBix Heterointerface
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Description
The dilute bismuthide III-V semiconductor GaAs1-xBix alloys have unusual properties owing to large bowing of the band gap energy caused by Bi incorporation and a reduction of the temperature coefficients of the band gap. Deep- and shallow-level defects in device-quality GaAs1-xBix (χ ≤ 5.4%) are investigated. Deep- and shallow-level defects behave as non-radiative recombination centers and electrical carrier traps. The Bi-related localized states induced by the interaction between spatially localized Bi states and the valence band of GaAs are continuously located up to ∼90meV from the valence band with a density of ∼1 × 1017cm-3. In spite of concerns about the degradation of the hole mobility in GaAs1-xBix due to scattering at these Bi-related localized states near the valence band, the p-type doping masks the contribution of the Bi-related states to the hole mobility, and a high hole mobility of 200 cm2V-1s-1 is demonstrated. Despite low-temperature growth, the deep-level trap density in GaAs1-xBix is suppressed on the order of 1015cm-3 comparable to GaAs because of a surfactant-like effect of the Bi atoms. While the interface state density of ∼8 × 1011cm-2eV-1 in a GaAs/GaAs1-xBix heterointerface cannot be reduced by annealing, it can be reduced by half by the insertion of a Bi graded layer into the heterointerface.
Journal
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- Journal of the Society of Materials Science, Japan
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Journal of the Society of Materials Science, Japan 62 (11), 672-678, 2013
The Society of Materials Science, Japan
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Keywords
Details 詳細情報について
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- CRID
- 1390282680422690560
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- NII Article ID
- 130003384103
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- NII Book ID
- AN00096175
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- COI
- 1:CAS:528:DC%2BC2cXhsVCgsbo%3D
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- ISSN
- 18807488
- 05145163
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- NDL BIB ID
- 025018065
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- Abstract License Flag
- Disallowed