書誌事項
- タイトル別名
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- Zinc Oxide Thick Film Growth on n-Type Gallium Nitride by Photoassisted Electrodeposition
- ヒカリ ショウシャ デンチャクホウ ニ ヨル nガタ チッカ ガリウム ジョウ ノ サンカ アエン ノ アツマク セイチョウ
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説明
Zinc oxide (ZnO) thick film growth on n-type gallium nitride (n-GaN) using an electrodeposition was investigated. We supplied electrons to the surface by light excitation using a Xe lamp for a long continuous electrochemical deposition. By using this technique, stable electrochemical reactions for 20h and 120h were realized. The sample grown for 20h had a thickness of 26μm, an averaged optical transmission of 85% in the visible-light region, and no obvious grain boundary from its cross-sectional SEM image. On the other hand, the sample grown for 120h had a thickness of 140μm, an averaged optical transmission of 25%, and many grain boundaries. Optimization of growth conditions for the thickness of above 30∼40μm is necessary.
収録刊行物
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- 材料
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材料 62 (11), 668-671, 2013
公益社団法人 日本材料学会
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詳細情報 詳細情報について
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- CRID
- 1390282680422691968
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- NII論文ID
- 130003384102
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- NII書誌ID
- AN00096175
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- COI
- 1:CAS:528:DC%2BC2cXhsVCgsb0%3D
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- ISSN
- 18807488
- 05145163
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- NDL書誌ID
- 025018008
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可
