ミストCVD法によるAlO<sub><font size="-1">x</font></sub>薄膜作製に対するO<sub><font size="-1">3</font></sub>支援の効果
書誌事項
- タイトル別名
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- The Effect of O<sub><font size="-1">3</font></sub> Support for Fabrication of AlO<sub><font size="-1">x</font></sub> Thin Film by Mist CVD Technique
- ミストCVD法によるAlOx薄膜作製に対するO₃支援の効果
- ミスト CVDホウ ニ ヨル AlOx ハクマク サクセイ ニ タイスル O ₃ シエン ノ コウカ
- The Effect of O3 Support for Fabrication of AlOx Thin Film by Mist CVD Technique
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AlOx thin film is one of the most promising high dielectric constant (High-k) materials. AlOx thin films were grown by mist CVD using a solution-based fabrication technology operated even under atmospheric pressure. This method is highly suitable due to easy configuration, low cost and environmental friendly operations. This report demonstrates significant improvements in the quality of AlOx thin films by O3 incorporation. AlOx thin films were grown above 400°C with breakdown field (EBD) over 6 MV/cm, static dielectric constant (κ0) over 6, and dynamic dielectric constant (κ∞) around 3. On the other hand, O3 assisted AlOx thin films were grown above 340°C with EBD over 8MV/cm, κ0 over 7, and κ∞ over 3. This work demonstrates that the quality of AlOx thin films could be significantly improved using O3 incorporation. AlOx thin film properties and its degradations were controlled by the OH(-AlOx) residual bonding. High quality AlOx thin films were grown at the temperature range from 400°C to 340°C by controlling OH(-AlOx) bonding decomposition with O3 incorporation.
収録刊行物
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- 材料
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材料 62 (11), 663-667, 2013
公益社団法人 日本材料学会
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詳細情報 詳細情報について
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- CRID
- 1390282680422728448
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- NII論文ID
- 130003384101
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- NII書誌ID
- AN00096175
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- ISSN
- 18807488
- 05145163
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- NDL書誌ID
- 025017959
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- 抄録ライセンスフラグ
- 使用不可