Heat and Mass Transfer in Si Melt during EMCZ Crystal Growth

DOI

Bibliographic Information

Other Title
  • 電流磁場印加法（EMCZ法）によるSi単結晶育成中の熱物質輸送

Description

Large-diameter, high-quality Si wafers are required to further the advance of ULSI device processing. Therefore, new crystal growth technique is needed to obtain large-diameter, high-quality Si crystals containing homogeneously distributed oxygen in the concentration required for ULSI device processing. To address this requirement, we developed a new crystal growth technique using electromagnetic force (EMF), which we call the electromagnetic Czochralski (EMCZ) method. Using the EMCZ method, we were able to precisely control oxygen concentration and distribution in commercial-size (200 mm diameter) Si crystals. This report describes how use of the EMCZ method can be advantageous in controlling oxygen concentration and grown-in defects in large-diameter Si crystals as well from the view point of heat and mass transfer in Si melt during crystal growth.

Journal

Details 詳細情報について

  • CRID
    1390282680565617664
  • NII Article ID
    130005020028
  • DOI
    10.11345/japannctam.52.0.539.0
  • Data Source
    • JaLC
    • CiNii Articles
  • Abstract License Flag
    Disallowed

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