Investigation of Low Temperature Wet Etching for Single Crystal SiC Wafers

DOI

Bibliographic Information

Other Title
  • 単結晶SiCの低温ウェットエッチングの検討

Description

In the wafer preparation process of the single crystal SiC, wet etching technology is not established as a production technology in order to remove the residual subsurface damaged layer caused by mechanical stock removal processing. The usage of molten KOH, which requires high temperature over 500 degrees, is well known as an evaluation method of the crystal defect in the research laboratory. This paper describes the result of the investigation for the wet etching in the extremely low temperature area around 100 degrees under the melting temperature of 360 degrees for KOH.

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Keywords

Details 詳細情報について

  • CRID
    1390282680634941184
  • NII Article ID
    130005486956
  • DOI
    10.11522/pscjspe.2015a.0_627
  • Text Lang
    ja
  • Data Source
    • JaLC
    • CiNii Articles
  • Abstract License Flag
    Disallowed

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