Derivation of transport equations for the analysis of variable composition semiconductor devices at low-temperatures

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  • Iwata Hideyuki
    Department of Electronics and Informatics, Toyama Prefectural University
  • Ohzone Takashi
    Department of Electronics and Informatics, Toyama Prefectural University

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  • 低温における不均一半導体デバイス解析のための輸送方程式の導出
  • テイオン ニ オケル フキンイツ ハンドウタイ デバイス カイセキ ノ タメ

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Abstract

Transport equations for use in analysis of not only homogenous but also variable composition semiconductor devices at low-temperatures are systematically derived. In these equations, Fermi-Dirac statistics and position-dependent band structure are taken into account. The general transport equations in materials with nonuniform band structure of previous workers are recast into a simple form so as to be convenient for use in numerical device simulation of those semiconductors at low-temperatures.

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