静電噴霧法によるFeS<sub>2</sub>量子ドット半導体の創製

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  • Formation of FeS<sub>2</sub> Quantum Dot Semiconductor Using Electro Spray Method

説明

<p>Iron Pyrite (FeS2), which has received much attention as an earth abundant semiconductor material, has relatively low bandgap of 0.95 eV. Downsizing to present quantum confinement effect enables us to increase the bandgap. This report proposed the electro-spray deposition (ESD) method to downsize the nanoparticle (NP) of FeS2. It is found that the fabricated FeS2 contained Marcasite which is impurity phase of FeS2. The TEM observation revealed the NPs of 5-nm diameter were produced by the ESD method. We suggested that the NPs were produced via Rayleigh fission since the distribution of NP’s diameter were scattered, resulting in poor fitting with logarithmic normal distribution. </p>

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