S1660103 革新的CMP/P-CVM融合加工の提案とその加工特性 : ワイドギャップ結晶材料の高効率加工へのブレークスルー([S166]窒化物半導体デバイスの精密加工プロセス)

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  • S1660103 Suggestion and processing properties of the innovative CMP/P-CVM combined processing method : Breakthrough to the high efficiency processing of wide gap crystal materials

抄録

Wide gap semiconductor substrates are hard to process materials, and are manufactured by various processing methods. CMP is a main processing method to planarize a substrate. On the other hand, P-CVM is a superior processing method which does not damage the substrate surface. To achieve high efficiency, high quality processing, we designed an innovative combined CMP/P-CVM processing machine and produced it experimentally. By the CMP/P-CVM combined processing, and it was confirmed the basic processing characteristics of the SiC substrate. As a result, we confirmed increase in removal rate and reduction of the surface roughness by the effect of P-CVM.

収録刊行物

  • 年次大会

    年次大会 2014 (0), _S1660103--_S1660103-, 2014

    一般社団法人 日本機械学会

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