2206 多機能高密度三次元集積回路におけるチップ間微細接合部の熱応力に関する研究(OS22.次世代CAD/CAM/CAE/CG/CSCW/CAT/C-Control (2),オーガナイズドセッション)

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  • 2206 A study on thermal stress of through silicon via in multiple functional high density 3D SIP

説明

The feasibility for cooling and mechanical strength around TSV (Through Silicon Via) structures in 3D SIP (System in Package) were discussed in this study with ADVENTURECIuster, large scale simulator on the basis of finite element method. Required cooling efficiency for the heat sink of the SIP was shown, and a liquid cooling system has to be considered. Thermal stresses in the chip were shown by elastic stress analysis. Stresses in TSV were like hydrostatic pressure and the magnitude of the equivalent stress was lower than yield stress of copper. However, it was noticed that the axial stress in TS V, that was 100 MPa, cannot be ignored.

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