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- 石原 隆
- 三菱電機株式会社先端技術総合研究所
書誌事項
- タイトル別名
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- Crystal Growth of Thin Film Si for photovoltaic Devices : Single Crystal Si Growth(<Special Issue>Frontiers of Thin Film Crystal Growth for the New Millennium)
- 太陽電池用Siの薄膜結晶成長
- タイヨウ デンチヨウ Si ノ ハクマク ケッショウ セイチョウ
この論文をさがす
説明
Solar cells are clean and renewable energy resources compared with conventional fossil oil or coal which causes the emission of carbon dioxide during convection and they are rapidly expanding to the world recently. The bulk crystalline Si solar cells that are mainly used at present have anxiety for the shortage of the supply of the substrate. Applicauon of Si thin film to solar cells are now drawing large attention for the possibility of decreasing the raw material consumption and realizing high conversion efficiency and high reliability. The key issues of the development are the selection of the substrate and the growth method. The selected substrate is not always able to use for the film growth under investigation because of its thermal properties and this means the performance of the device is affected by the selected substrate and consequently the growth method. It will be important to develop in the balance of the performance and the manufacturing cost in the future.
収録刊行物
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- 日本結晶成長学会誌
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日本結晶成長学会誌 27 (4), 162-170, 2000
日本結晶成長学会
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詳細情報 詳細情報について
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- CRID
- 1390282680839246080
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- NII論文ID
- 110002715427
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- NII書誌ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- NDL書誌ID
- 5528655
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可