書誌事項
- タイトル別名
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- The Relationships between Argon Gas Flow on Silicon Melt Surface and Oxygen Concentration in Czochralski Silicon Single Crystals(<Special Issue>Material Transport of Vapor-Liquid Interface during Crystal Growth and Effect on Crystal Quality)
- シリコン融液表面のアルゴンガス流れと単結晶中の酸素濃度
- シリコンユウエキ ヒョウメン ノ アルゴン ガス ナガレ ト タンケッショウ チュウ ノ サンソ ノウド
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The effects of the argon gas flow rate and furnace pressure on the oxygen concentrations in Czochralski (CZ) and transverse magnetic field applied Czochralski (TMCZ) silicon single crystals were examined through experimental crystal growth. The oxygen concentrations in the grown crystals were varied based on the changes of the furnace pressure and the argon gas flow rate . The oxygen concentrations were directly proportional in the CZ crystals and inversely proportional in the TMCZ crystals to the calculated flow velocity of argon gas. To explain the CZ results, newly proposed melt flow pattern model based on the melt flow pattern changes by the argon gas shear stress is applicable. Some numerical simulation works supported by a model experiment with alternative materials confirmed the effects of argon gas shear stress. For the TMCZ results, conventional SiO partial Pressure model or boundary layer thickness model can be applied due to the increased effective viscosity of silicon melt by the magnetic field.
収録刊行物
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- 日本結晶成長学会誌
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日本結晶成長学会誌 27 (5), 275-280, 2000
日本結晶成長学会
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詳細情報 詳細情報について
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- CRID
- 1390282680839319680
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- NII論文ID
- 110002715440
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- NII書誌ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- NDL書誌ID
- 5597556
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可