書誌事項
- タイトル別名
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- Growth Mechanism of Chains of Crystalline-Silicon Nanospheres(<Special Issue>Nanocrystals)
- 総合報告 シリコンナノ結晶鎖の成長メカニズム
- ソウゴウ ホウコク シリコンナノ ケッショウ サ ノ セイチョウ メカニズム
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We have found a new route for fabricating self-organized semiconductor-insulator nanostructures by utilizing periodic instability in wetting property at nano-interface. Via an extension of the vapor-liquid-solid process with gold catalysts, we have grown chains of crystallinesilicon nanospheres: crystalline-silicon nanospheres are connected by and covered with amorphous silicon oxide at a nearly equal spacing forming chain-like structures. Special attention was paid to controlling impurities and we found that the yield of the chains growth increased remarkably when we used complex catalysts of such as gold/lead. The growth mechanism of the chains was revealed by means of transmission electron microscopy observations and computer simulations: the diameter of a silicon nano-wire was modulated due to the periodic instability and then the array of silicon nanocrystallites was formed by the surface oxidation.
収録刊行物
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- 日本結晶成長学会誌
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日本結晶成長学会誌 28 (3), 131-136, 2001
日本結晶成長学会
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詳細情報 詳細情報について
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- CRID
- 1390282680839336960
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- NII論文ID
- 110002715463
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- NII書誌ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- NDL書誌ID
- 5940063
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可