22pA6 Measurement of Young's modulus of silicon crystal in high temperature and its application to the thermal stress calculation

DOI 3 References
  • Ono N
    Mitsubishi Materials Corp., Silicon Research Center
  • Kitamura K
    Mitsubishi Materials Corp., Silicon Research Center
  • Nakajima K
    Mitsubishi Materials Corp., Silicon Research Center

Bibliographic Information

Other Title
  • 22pA6 シリコン単結晶の高温でのヤング率の測定と熱応力計算(バルク成長シンポジウム)

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Description

Young's modulus of silicon single crystal was measured in the range from room temperature to 1000℃. The modulus was calculated from the resonance frequencies in the flexural mode of vibration. Young's modulus in high temperature did not decrease so much as expected. The dependency of Boron concentration was also investigated and found to be very small in this temperature range.

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Details 詳細情報について

  • CRID
    1390282680840349568
  • NII Article ID
    110002769103
  • NII Book ID
    AN00188386
  • DOI
    10.19009/jjacg.26.2_17
  • ISSN
    21878366
    03856275
  • Text Lang
    ja
  • Data Source
    • JaLC
    • CiNii Articles
  • Abstract License Flag
    Disallowed

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