書誌事項
- タイトル別名
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- Growth of GaAs Single Crystals by the VCZ Method (<Special Issue> Bulk Crystal Growth(II))
- VCZ法によるGaAs単結晶の成長
- VCZホウ ニ ヨル GaAs タンケッショウ ノ セイチョウ
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We have developed VCZ method for growing GaAs and InP single crystals with low-dislocation-density. In this report, we show the growth by the VCZ method and the characterization of 4"φ and 6"φ semi-insulating and 3"φ Si-doped GaAs single crystals. In the VCZ method, a GaAs crystal is pulled under an arsenic atmosphere sealed in an inner chamber. The surface of the crystal isn't decomposed over 1100℃, therefore the crystal can be grown under a low tempertaure gradient so that growing a crystal with low dislocation density can be achieved. Dislocation densities of 4"φ and 6"φsemi insulating VCZ crystals are one order of magnitude and one third lower than that of the 4"φ LEC crystal respectively. The VCZ crystal includes low residual stress which causes cracking of a wafer and generating slip-dislocations in a wafer during hest treatments. In our heat treatment of 4"φ LEC and 4"φ VCZ wafers at 480℃, slip-dislocations are generated only in the LEC wafer. We have also successfully grown 3"φ Si-doped GaAs single crystals with wide dislocation free region by the VCZ method.
収録刊行物
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- 日本結晶成長学会誌
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日本結晶成長学会誌 22 (1), 17-24, 1995
日本結晶成長学会
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詳細情報 詳細情報について
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- CRID
- 1390282680840383360
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- NII論文ID
- 110002714403
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- NII書誌ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- NDL書誌ID
- 3609567
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可