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- 西永 頌
- 名城大学理工学部材料機能工学科
書誌事項
- タイトル別名
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- Prospects of Thin Film Growth in the 21st Century(<Special Issue>Frontiers of Thin Film Crystal Growth for the New Millennium)
- 21世紀を展望する
- 21セイキ オ テンボウ スル
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抄録
In the present paper, the contributions of crystal growth in the fabrication of the electronic and optical devices in the 20th century are reviewed first. The largest event that showed the importance of the crystal growth was the invention of transistor. Without single crystal of germanium, this invention might not be happened. The developments of various growth methods such as liquid phase epitaxy, molecular beam epitaxy and metal organic vapor phase epitaxy have made it possible to realize room temperature cw operation of semiconductor laser, inventions of high electron mobility transistor (HEMT), MQW lasers and blue/ultra-violet diode lasers . Basing on the above background, the prospects of the thin film growth in the 21st century were discussed. As the important subjects to be intensively studied, nano-structure fabrication, quantum mechanical approach of the crystal growth theory, heteroepitaxy of large lattice mismatched system, growth of important materials, crystal growth under microgravity in space and crystal growth for the solar battery are chosen and their prospects are described.
収録刊行物
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- 日本結晶成長学会誌
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日本結晶成長学会誌 27 (4), 149-155, 2000
日本結晶成長学会
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詳細情報 詳細情報について
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- CRID
- 1390282680840400128
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- NII論文ID
- 110002715425
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- NII書誌ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- NDL書誌ID
- 5528639
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可