Relevance of Surface reconstruction to specular RHEED intensity on GaAS(001)

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Bibliographic Information

Other Title
  • 鏡面RHEED強度の時間変化と表面再構成構造との関わり : 成長界面IV

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Description

By carrying out Monte Carlo simulations, we found that all features of the time evolution of a specular reflection high-energy electron (RHEED) diffraction in the homoepitaxial growth of GaAs(001) is well accounted for by the density of double As dimers.

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Details 詳細情報について

  • CRID
    1390282680840616832
  • NII Article ID
    110002715370
  • NII Book ID
    AN00188386
  • DOI
    10.19009/jjacg.27.1_153
  • ISSN
    21878366
    03856275
  • Text Lang
    ja
  • Data Source
    • JaLC
    • CiNii Articles
  • Abstract License Flag
    Disallowed

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